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Phys. Rev. A 75, 043813 (2007) [14 pages]

Relationship between resolution enhancement and multiphoton absorption rate in quantum lithography

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Mankei Tsang*
Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125, USA

Received 16 July 2006; published 20 April 2007

The proposal of quantum lithography [ Boto et al. Phys. Rev. Lett. 85 2733 (2000)] is studied via a rigorous formalism. It is shown that, contrary to Boto et al.’s heuristic claim, the multiphoton absorption rate of a (∣N,0⟩+∣0,N⟩) quantum state is actually lower than that of a classical state with otherwise identical parameters. The proof-of-concept experiment of quantum lithography [ D’Angelo et al. Phys. Rev. Lett. 87 013602 (2001)] is also analyzed in terms of the proposed formalism, and the experiment is shown to have a reduced multiphoton absorption rate in order to emulate quantum lithography accurately. Finally, quantum lithography by the use of a jointly Gaussian quantum state of light is investigated to illustrate the trade-off between resolution enhancement and multiphoton absorption rate.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevA.75.043813
DOI:
10.1103/PhysRevA.75.043813
PACS:
42.50.Dv, 42.50.St

*Electronic address: mankei@optics.caltech.edu