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Phys. Rev. A 75, 020502(R) (2007) [4 pages]

Electron-ion-ion triple-coincidence spectroscopic study of site-specific fragmentation caused by Si:2p core-level photoionization of F3SiCH2CH2Si(CH3)3 vapor

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S. Nagaoka1,*, G. Prümper2, H. Fukuzawa2, M. Hino1, M. Takemoto1, Y. Tamenori3, J. Harries3, I. H. Suzuki4, O. Takahashi5, K. Okada5, K. Tabayashi5, X.-J. Liu2, T. Lischke2, and K. Ueda2
1Department of Chemistry, Ehime University, Matsuyama 790-8577, Japan
2Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
3JASRI, 1-1-1 Kouto, Sayo-cho, Sayo-gun 679-5198, Japan
4AIST, Tsukuba 305-8568, Japan
5Department of Chemistry, Hiroshima University, Higashi-Hiroshima 739-8526, Japan

Received 18 November 2006; published 20 February 2007

Site-specific fragmentation caused by Si:2p core-level photoionization of F3SiCH2CH2Si(CH3)3 vapor was studied by means of high-resolution energy-selected-electron photoion-photoion triple-coincidence spectroscopy. The ab initio molecular orbital method was used for the theoretical description. F3SiCH2CH2+-Si(CH3)3+ ion pairs were produced by the 2p photoionization of the Si atoms bonded to the three methyl groups, and SiF+-containing ion pairs were produced by the 2p photoionization of the Si atoms bonded to the three F atoms.

© 2007 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevA.75.020502
DOI:
10.1103/PhysRevA.75.020502
PACS:
33.60.Fy, 33.80.Eh, 82.50.Kx

*Electronic address: nagaoka@ehimegw.dpc.ehime-u.ac.jp

 
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