corner
corner

Phys. Rev. A 72, 022104 (2005) [6 pages]

Microscopic theory of spontaneous decay in a dielectric

Download: PDF (96 kB) Buy this article Export: BibTeX or EndNote (RIS)

Hao Fu and P. R. Berman
Michigan Center for Theoretical Physics, FOCUS Center, and Physics Department, University of Michigan, Ann Arbor, Michigan 48109-1040, USA

Received 13 April 2005; published 9 August 2005

The local field correction to the spontanous decay rate of an impurity source atom embedded in a disordered dielectric is calculated to second order in the dielectric density. The result is found to differ from predictions associated with both “virtual” and “real” cavity models of this decay process. However, if the contributions from two dielectric atoms at the same position are included, the virtual cavity result is reproduced.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevA.72.022104
DOI:
10.1103/PhysRevA.72.022104
PACS:
03.65.Ge, 32.80.−t, 42.25.Bs