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Phys. Rev. A 69, 042903 (2004) [7 pages]

Intrinsic single- and multiple-pulse laser-induced damage in silicate glasses in the femtosecond-to-nanosecond region

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Oleg Efimov
HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, California 90265, USA

Saulius Juodkazis*
Core Research for Evolution Science & Technology (CREST), Japan Science & Technology Corporation, Ecosystem Engineering Department, The University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan

Hiroaki Misawa
Core Research for Evolution Science & Technology (CREST), Japan Science & Technology Corporation, Research Institute for Electronic Science, Hokkaido University, CRIS Building, Sapporo 001-0021, Japan

Received 14 July 2003; revised 20 January 2004; published 21 April 2004

We show that the threshold power density of the intrinsic laser-induced damage in borosilicate glass at ∼1 μm wavelength does not depend on pulse duration from 2×10−13 to 3×10−8 s and has the same value for both single- and multiple-pulse exposure of the sample. This indicates that the mechanism of the intrinsic damage in glasses involves a collective response of a certain volume in the dielectric as a whole, such as “dielectric-metal” phase transition, rather than a process of individual generation and accumulation of electrons, such as multiphoton, tunneling, or avalanche. Also, we demonstrate that under femtosecond exposure the threshold of the plasma formation in transparent glasses is considerably higher than the threshold of the residual change of medium parameters.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevA.69.042903
DOI:
10.1103/PhysRevA.69.042903
PACS:
79.20.Ds, 81.16.−c, 32.80.Rm, 42.70.Ce

*Corresponding author. Present address: Research Institute for Electronic Science, Hokkaido University, CRIS Building, Sapporo 001-0021, Japan. FAX: (+81 11) 706 9359. Electronic address: saulius@es.hokudai.ac.jp