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Phys. Rev. A 68, 053802 (2003) [10 pages]

Theory of quantum-coherence phenomena in semiconductor quantum dots

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W. W. Chow
Semiconductor Material and Device Sciences Department, Sandia National Laboratories, Albuquerque, New Mexico 87185-0601, USA

H. C. Schneider
Physics Department, Kaiserslautern University, P.O. Box 3049, 67653 Kaiserslautern, Germany

M. C. Phillips
Lasers, Optics and Remote Sensing Department, Sandia National Laboratories, Albuquerque, New Mexico 87185-1423, USA

Received 21 May 2003; published 3 November 2003

This paper explores quantum-coherence phenomena in a semiconductor quantum-dot structure. The calculations predict the occurrence of inversionless gain, electromagnetically induced transparency, and refractive-index enhancement in the transient regime for dephasing rates typical under room temperature and high excitation conditions. They also indicate deviations from atomic systems because of strong many-body effects. Specifically, Coulomb interaction involving states of the quantum dots and the continuum belonging to the surrounding quantum well leads to collision-induced population redistribution and many-body energy and field renormalizations that modify the magnitude, spectral shape, and time dependence of quantum-coherence effects.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevA.68.053802
DOI:
10.1103/PhysRevA.68.053802
PACS:
42.50.Gy, 42.65.-k, 78.67.Hc