Three-terminal semiconductor laser for wave mixing

We suggest and analyze the concept of a semiconductor laser device that incorporates two basic ideas: (i) dual-wavelength generation of two optical fields on the interband transitions with independent control of each field in a three-terminal “transistor” scheme, and (ii) generation of infrared radiation in the 3–300 μm range due to nonlinear wave mixing of the above optical fields in the same laser cavity. Due to inversionless nature of the difference frequency generation and inherently low threshold current, the laser can be capable of continuous room-temperature operation in the mid/far-infrared and THz range.