Phys. Rev. A 59, 2094–2104 (1999)

1-bit memory using one electron: Parametric oscillations in a Penning trap

Abstract

References

Citing Articles (10)

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C. H. Tseng^*, D. Enzer^†, and G. Gabrielse
Department of Physics, Harvard University, Cambridge, Massachusetts 02138

F. L. Walls
National Institute of Standards and Technology, Boulder, Colorado 80303

Received 24 June 1998; published in the issue dated March 1999

The parametric oscillation of a single trapped electron is studied and used to measure enhanced spontaneous emission. Hysteresis in this motion provides a 1-bit memory to store information about excitations made with the electron “in the dark.” The time dependence and stability criteria for the parametric excitation are examined. The cyclotron motions for one and two electrons are also studied.

URL:

http://link.aps.org/doi/10.1103/PhysRevA.59.2094

DOI:

10.1103/PhysRevA.59.2094

PACS:

32.80.Pj

^*Present address: Dept. of Nucl. Eng., MIT, 150 Albany Street, Cambridge, MA 02139.

^†Present address: Los Alamos National Laboratory, MS H803, Los Alamos, NM 87545.

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Phys. Rev. A 59, 2094–2104 (1999)

1-bit memory using one electron: Parametric oscillations in a Penning trap