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Phys. Rev. A 59, 342–345 (1999)

Charge transfer between Si4+ ion and helium at electron-volt energies

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Z. Fang and Victor H. S. Kwong
Department of Physics, University of Nevada, Las Vegas, 4505 Maryland Parkway, Las Vegas, Nevada 89154

Received 6 July 1998; published in the issue dated January 1999

The charge-transfer rate coefficient for the reaction Si4++He⃗products was measured at an equivalent temperature of 4.6×103K using a laser-induced plasma ion source and ion storage. The rate coefficient is 4.54(0.48)×10-12cm3 s-1 and is at least an order of magnitude smaller than the available theoretical values.

© 1999 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevA.59.342
DOI:
10.1103/PhysRevA.59.342
PACS:
34.70.+e, 32.80.Pj, 52.50.Jm, 95.30.Dr