Phys. Rev. A 53, 2799–2803 (1996)Measurement of spontaneous-emission enhancement near the one-dimensional photonic band edge of semiconductor heterostructuresReceived 6 April 1995; published in the issue dated April 1996 We present results of an experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PBG) structures. The PBG samples are multilayer AlAs/Al0.2Ga0.8As/GaAs p-i-n light-emitting diodes, with layers arranged as a distributed Bragg reflector. The emission spectra normal to the layers are measured, and we use a simple method to model the power spectrum of spontaneous emission from within the structures. We find that the emitted power is enhanced by a factor of 3.5 at the frequencies near the photonic band edge. © 1996 The American Physical Society. © 1996 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevA.53.2799
DOI:
10.1103/PhysRevA.53.2799
PACS:
42.50.Lc, 42.60.Lh, 78.66.Fd, 41.20.Jb
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